Bipolar resistance switching characteristics in a thin Ti-Ni-O compound film

被引：16

作者：

Choi, Joonhyuk ^{[1
]}

Song, JaeHoon ^{[1
]}

Jung, Kyooho ^{[1
]}

Kim, Yongmin ^{[1
]}

Im, Hyunsik ^{[1
]}

Jung, Woong ^{[1
]}

Kim, Hyungsang ^{[2
]}

Do, Young Ho ^{[3
]}

Kwak, June Sik ^{[3
]}

Hong, Jinpyo ^{[3
]}

机构：

[1] Dongguk Univ, Dept Semicond Sci, Seoul 100715, South Korea

[2] Dongguk Univ, Dept Phys, Seoul 100715, South Korea

[3] Hanyang Univ, Dept Phys, Seoul 133791, South Korea

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 17期

关键词：

OXIDATION; ALLOY;

D O I：

10.1088/0957-4484/20/17/175704

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Resistance switching phenomena in an amorphous Ni-Ti-O film were investigated. Very clear bipolar resistive switching characteristics were observed with good reproducibility. Stable retention and on/off pulse switching operation was demonstrated. An analysis of x-ray photoelectron spectroscopy of the Ni-Ti-O film provided a clue that the observed unusual bipolar resistance switching in the film is due to a microscopic change in the Ni-O and Ti-O binding states at the Ni-Ti-O film/electrode interface.

引用

页数：5

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