Preparing patterned carbonaceous nanostructures directly by overexposure of PMMA using electron-beam lithography

被引：44

作者：

Duan, Huigao ^{[1
,2
]}

Zhao, Jianguo ^{[1
]}

Zhang, Yongzhe ^{[1
]}

Xie, Erqing ^{[1
]}

Han, Li ^{[2
]}

机构：

[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

[2] Chinese Acad Sci, Inst Elect Engn, Beijing 100190, Peoples R China

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 13期

关键词：

CROSS-LINKED PMMA; INDUCED DEPOSITION; IRRADIATION; FABRICATION; ARRAYS; NANOTUBES; SILICON; RESIST;

D O I：

10.1088/0957-4484/20/13/135306

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The overexposure process of poly(methyl methacrylate) (PMMA) was studied in detail using electron-beam lithography. It was found that PMMA films could be directly patterned without development due to the electron-beam-induced collapse of PMMA macromolecular chains. By analyzing the evolution of surface morphologies and compositions of the overexposed PMMA films, it was also found that the transformation of PMMA from positive to negative resist was a carbonization process, so patterned carbonaceous nanostructures could be prepared directly by overexposure of PMMA using electron-beam lithography. This simple one-step process for directly obtaining patterned carbonaceous nanostructures has promising potential application as a tool to make masks and templates, nanoelectrodes, and building blocks for MEMS and nanophotonic devices.

引用

页数：8

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