Preparing patterned carbonaceous nanostructures directly by overexposure of PMMA using electron-beam lithography

被引：44

作者：

Duan, Huigao ^{[1
,2
]}

Zhao, Jianguo ^{[1
]}

Zhang, Yongzhe ^{[1
]}

Xie, Erqing ^{[1
]}

Han, Li ^{[2
]}

机构：

[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

[2] Chinese Acad Sci, Inst Elect Engn, Beijing 100190, Peoples R China

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 13期

关键词：

CROSS-LINKED PMMA; INDUCED DEPOSITION; IRRADIATION; FABRICATION; ARRAYS; NANOTUBES; SILICON; RESIST;

D O I：

10.1088/0957-4484/20/13/135306

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The overexposure process of poly(methyl methacrylate) (PMMA) was studied in detail using electron-beam lithography. It was found that PMMA films could be directly patterned without development due to the electron-beam-induced collapse of PMMA macromolecular chains. By analyzing the evolution of surface morphologies and compositions of the overexposed PMMA films, it was also found that the transformation of PMMA from positive to negative resist was a carbonization process, so patterned carbonaceous nanostructures could be prepared directly by overexposure of PMMA using electron-beam lithography. This simple one-step process for directly obtaining patterned carbonaceous nanostructures has promising potential application as a tool to make masks and templates, nanoelectrodes, and building blocks for MEMS and nanophotonic devices.

引用

页数：8

共 32 条

[11] Formation and thermal stability of sub-10-nm carbon templates on Si(100) [J].

Guise, O ;

Ahner, J ;

Yates, J ;

Levy, J .

APPLIED PHYSICS LETTERS, 2004, 85 (12) :2352-2354

[12] Negative PMMA as a high-resolution resist - the limits and possibilities [J].

Hoole, ACF ;

Welland, ME ;

Broers, AN .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (09) :1166-1170

[13] Photonic crystals based on periodic arrays of aligned carbon nanotubes [J].

Kempa, K ;

Kimball, B ;

Rybczynski, J ;

Huang, ZP ;

Wu, PF ;

Steeves, D ;

Sennett, M ;

Giersig, M ;

Rao, DVGLN ;

Carnahan, DL ;

Wang, DZ ;

Lao, JY ;

Li, WZ ;

Ren, ZF .

NANO LETTERS, 2003, 3 (01) :13-18

[14] Nanoimprint lithography patterns with a vertically aligned nanoscale tubular carbon structure [J].

Kim, Youn-Su ;

Lee, Kyeongmi ;

Lee, Jae Suk ;

Jung, Gun Young ;

Kim, Won Bae .

NANOTECHNOLOGY, 2008, 19 (36)

[15] Mechanism of etching and surface relief development of PMMA under low-energy ion bombardment [J].

Koval, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (02) :843-851

[16] Narrow long Josephson junctions [J].

Koval, Y ;

Wallraff, A ;

Fistul, M ;

Thyssen, N ;

Kohlstedt, H ;

Ustinov, AV .

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1999, 9 (02) :3957-3961

[17] LET effect on cross-linking and scission mechanisms of PMMA during irradiation [J].

Lee, EH ;

Rao, GR ;

Mansur, LK .

RADIATION PHYSICS AND CHEMISTRY, 1999, 55 (03) :293-305

[18] The fabrication of carbon nanostructures using electron beam resist pyrolysis and nanomachining processes for biosensing applications [J].

Lee, Jung A. ;

Lee, Kwang-Cheol ;

Park, Se Il ;

Lee, Seung S. .

NANOTECHNOLOGY, 2008, 19 (21)

[19] Unconventional method for morphology-controlled carbonaceous nanoarrays based on electron irradiation of a polystyrene colloidal monolayer [J].

Li, Yue ;

Lee, Eun Je ;

Cai, Weiping ;

Kim, Ki Yup ;

Cho, Sung Oh .

ACS NANO, 2008, 2 (06) :1108-1112

[20] Three-dimensional fabrication on GaAs surfaces using electron-beam-induced carbon deposition followed by wet chemical etching [J].

Morita, Noboru ;

Kawasegi, Noritaka ;

Ooi, Keitaro .

NANOTECHNOLOGY, 2008, 19 (15)

← 1 2 3 4 →