Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization

被引：4

作者：

Kobayashi, N ^{[1
]}

Hasegawa, M ^{[1
]}

Hayashi, N ^{[1
]}

Katsumata, H ^{[1
]}

Makita, Y ^{[1
]}

Shibata, H ^{[1
]}

Uekusa, S ^{[1
]}

机构：

[1] MEIJI UNIV, KAWASAKI, KANAGAWA 214, JAPAN

来源：

APPLIED SURFACE SCIENCE | 1996年 / 100卷

关键词：

D O I：

10.1016/0169-4332(96)00327-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In order to synthesize metastable group-IV binary alloy semiconductor thin films on Si, Si(100) substrates were implanted with 17 keV C ions for Si1-yCy/Si and alternatively with 110 keV Sn ions for Si1-zSnz/Si. Subsequent ion-beam-induced epitaxial crystallization (IBIEC) with 400 keV Ar ions at 300-400 degrees C has induced a good epitaxial growth up to the surface both for Si1-yCy/Si (y = 0.014 at peak concentration) and for Si1-zSnz/Si (z = 0.029 at peak concentration), X-rap diffraction measurements have shown a growth of Si1-yCy/Si with smaller tensile strain than for Si1-yCy/Si grown by solid phase epitaxial growth (SPEG) up to 650 degrees C. Photoluminescence measurements have revealed properties of defect related to I-1(Ar) line and G line emissions for IBIEC-grown Si1-yCy/Si samples, IBIEC has induced an incomplete crystalline growth and a loss of implanted Sn atoms for Si1-zSnz/Si(z = 0.086 at peak concentration).

引用

页码：498 / 502

页数：5

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