Evolution of chemical states within the HfO2/Si(100) interface upon annealing, prepared by direct electron beam evaporation

被引：8

作者：

Fluechter, C. R. ^{[1
,2
]}

Weier, D. ^{[1
,2
]}

Schuermann, M. ^{[1
]}

Berges, U. ^{[2
]}

Doering, S. ^{[2
]}

Westphal, C. ^{[1
,2
]}

机构：

[1] Tech Univ Dortmund, D-44221 Dortmund, Germany

[2] Tech Univ Dortmund, DELTA, D-44227 Dortmund, Germany

来源：

SURFACE SCIENCE | 2008年 / 602卷 / 15期

关键词：

high-k; silicon; photoelectron spectroscopy; photoelectron diffraction;

D O I：

10.1016/j.susc.2008.05.039

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We demonstrate the preparation of the system HfO2/Si(100) by direct evaporation of hafnium dioxide from a specially prepared electron beam evaporator. Investigating the system by means of photoelectron spectroscopy in the soft X-ray regime, we show the system's interface being free of silicon dioxide and hafnium silicide after evaporation. Upon annealing the formation of SiO2 at the interface is investigated by using high resolution photoemission spectra. Their separation into different sub-oxides at the interface is presented. The structural order at the crystalline/amorphous interface is investigated by X-ray photoelectron diffraction. The system's degradation is observed at above 700 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2623 / 2627

页数：5

共 19 条

[1] Effect of annealing conditions on a hafnium oxide reinforced SiO2 gate dielectric deposited by plasma-enhanced metallorganic CVD [J].

Choi, KJ ;

Shin, WC ;

Yoon, SG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (03) :F18-F21

[2] Hafnium silicide formation on Si(100) upon annealing [J].

de Siervo, A. ;

Fluechter, C. R. ;

Weier, D. ;

Schuermann, M. ;

Dreiner, S. ;

Westphal, C. ;

Carazzolle, M. F. ;

Pancotti, A. ;

Landers, R. ;

Kleiman, G. G. .

PHYSICAL REVIEW B, 2006, 74 (07)

[3] Structural analysis of the SiO2/Si(100) interface by means of photoelectron diffraction -: art. no. 126101 [J].

Dreiner, S ;

Schürmann, M ;

Westphal, C .

PHYSICAL REVIEW LETTERS, 2004, 93 (12) :126101-1

[4]

DREINER S, 2004, J ELECT SPECTROSC RE, V79, P137

[5] Structure analysis of the system hafnium/silicon(100) by means of X-ray photoelectron spectroscopy and X-ray photoelectron diffraction (XPD) [J].

Fluechter, C. R. ;

de Siervo, A. ;

Weier, D. ;

Schuermann, M. ;

Berges, U. ;

Dreiner, S. ;

Carazzolle, M. F. ;

Landers, R. ;

Kleiman, G. G. ;

Westphal, C. .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (06) :1049-1054

[6] The interface between silicon and a high-k oxide [J].

Först, CJ ;

Ashman, CR ;

Schwarz, K ;

Blöchl, PE .

NATURE, 2004, 427 (6969) :53-56

[7] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE [J].

HIMPSEL, FJ ;

MCFEELY, FR ;

TALEBIBRAHIMI, A ;

YARMOFF, JA ;

HOLLINGER, G .

PHYSICAL REVIEW B, 1988, 38 (09) :6084-6096

[8] Thermodynamic stability of binary oxides in contact with silicon [J].

Hubbard, KJ ;

Schlom, DG .

JOURNAL OF MATERIALS RESEARCH, 1996, 11 (11) :2757-2776

[9] Hafnium silicide formation on Si(001) [J].

Johnson-Steigelman, HT ;

Brinck, AV ;

Parihar, SS ;

Lyman, PF .

PHYSICAL REVIEW B, 2004, 69 (23) :235322-1

[10]

Lee JH, 2004, J KOREAN PHYS SOC, V44, P1590

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