Intraband hole burning of colloidal quantum dots

被引：44

作者：

Shim, M ^{[1
]}

Guyot-Sionnest, P ^{[1
]}

机构：

[1] Univ Chicago, James Franck Inst, Chicago, IL 60637 USA

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.64.245342

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CdSe, InP, and ZnO colloidal quantum dots of 1.5-2.5 nm radius show <3 meV homogeneous width at 10 K for the midinfrared 1 S-e- 1 P-e intraband transition around 300 meV. A weak temperature dependence leads to a homogeneous width of less than 10 meV at 200 K for 2.3 nm radius CdSe. The strength of the LO-phonon replica is in quantitative agreement with expectations from bulk parameters.

引用

页数：4

共 35 条

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