Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

被引:52
作者
Brunhes, T
Boucaud, P
Sauvage, S
Aniel, F
Lourtioz, JM
Hernandez, C
Campidelli, Y
Kermarrec, O
Bensahel, D
Faini, G
Sagnes, I
机构
[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
[2] STMicroelectronics, F-38926 Crolles, France
[3] CNRS, Microstruct & Microelect Lab, F-92220 Bagneux, France
[4] Ctr Natl Etud Telecommun, Lab CDP, CNRS, URA 250, F-92220 Bagneux, France
关键词
D O I
10.1063/1.1308526
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have fabricated light-emitting diodes on Si operating in the near-infrared. The active region of the p-i-n diodes consists of Ge/Si self-assembled quantum dots. The Ge islands were grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The photoluminescence and the electroluminescence of the islands are resonant in the spectral range around 1.4-1.5 mu m wavelength. The electroluminescence is observed up to room temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)00437-X].
引用
收藏
页码:1822 / 1824
页数:3
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