Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

被引：52

作者：

Brunhes, T

Boucaud, P

Sauvage, S

Aniel, F

Lourtioz, JM

Hernandez, C

Campidelli, Y

Kermarrec, O

Bensahel, D

Faini, G

Sagnes, I

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

[2] STMicroelectronics, F-38926 Crolles, France

[3] CNRS, Microstruct & Microelect Lab, F-92220 Bagneux, France

[4] Ctr Natl Etud Telecommun, Lab CDP, CNRS, URA 250, F-92220 Bagneux, France

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 12期

关键词：

D O I：

10.1063/1.1308526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated light-emitting diodes on Si operating in the near-infrared. The active region of the p-i-n diodes consists of Ge/Si self-assembled quantum dots. The Ge islands were grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The photoluminescence and the electroluminescence of the islands are resonant in the spectral range around 1.4-1.5 mu m wavelength. The electroluminescence is observed up to room temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)00437-X].

引用

页码：1822 / 1824

页数：3

共 16 条

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