Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

被引：52

作者：

Brunhes, T

Boucaud, P

Sauvage, S

Aniel, F

Lourtioz, JM

Hernandez, C

Campidelli, Y

Kermarrec, O

Bensahel, D

Faini, G

Sagnes, I

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

[2] STMicroelectronics, F-38926 Crolles, France

[3] CNRS, Microstruct & Microelect Lab, F-92220 Bagneux, France

[4] Ctr Natl Etud Telecommun, Lab CDP, CNRS, URA 250, F-92220 Bagneux, France

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 12期

关键词：

D O I：

10.1063/1.1308526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated light-emitting diodes on Si operating in the near-infrared. The active region of the p-i-n diodes consists of Ge/Si self-assembled quantum dots. The Ge islands were grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The photoluminescence and the electroluminescence of the islands are resonant in the spectral range around 1.4-1.5 mu m wavelength. The electroluminescence is observed up to room temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)00437-X].

引用

页码：1822 / 1824

页数：3

共 16 条

[11] ULTRATHIN SIMGEN STRAINED LAYER SUPERLATTICES - A STEP TOWARDS SI OPTOELECTRONICS
PRESTING, H
KIBBEL, H
JAROS, M
TURTON, RM
MENCZIGAR, U
ABSTREITER, G
GRIMMEISS, HG
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (09) : 1127 - 1148
[12] PHOTOLUMINESCENCE STUDY OF THE CROSSOVER FROM 2-DIMENSIONAL TO 3-DIMENSIONAL GROWTH FOR GE ON SI(100)
SCHITTENHELM, P
GAIL, M
BRUNNER, J
NUTZEL, JF
ABSTREITER, G
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (09) : 1292 - 1294
[13] Photoluminescence of charged InAs self-assembled quantum dots
Schmidt, KH
Medeiros-Ribeiro, G
Petroff, PM
[J]. PHYSICAL REVIEW B, 1998, 58 (07): : 3597 - 3600
[14] Photoluminescence study of the initial stages of island formation for Ge pyramids/domes and hut clusters on Si(001)
Schmidt, OG
Lange, C
Eberl, K
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (13) : 1905 - 1907
[15] Electroluminescence of erbium-oxygen-doped silicon diodes grown by molecular beam epitaxy
Stimmer, J
Reittinger, A
Nutzel, JF
Abstreiter, G
Holzbrecher, H
Buchal, C
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (23) : 3290 - 3292
[16] PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON
WAGNER, J
[J]. PHYSICAL REVIEW B, 1984, 29 (04): : 2002 - 2009

← 1 2 →