Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

被引:52
作者
Brunhes, T
Boucaud, P
Sauvage, S
Aniel, F
Lourtioz, JM
Hernandez, C
Campidelli, Y
Kermarrec, O
Bensahel, D
Faini, G
Sagnes, I
机构
[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
[2] STMicroelectronics, F-38926 Crolles, France
[3] CNRS, Microstruct & Microelect Lab, F-92220 Bagneux, France
[4] Ctr Natl Etud Telecommun, Lab CDP, CNRS, URA 250, F-92220 Bagneux, France
关键词
D O I
10.1063/1.1308526
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have fabricated light-emitting diodes on Si operating in the near-infrared. The active region of the p-i-n diodes consists of Ge/Si self-assembled quantum dots. The Ge islands were grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The photoluminescence and the electroluminescence of the islands are resonant in the spectral range around 1.4-1.5 mu m wavelength. The electroluminescence is observed up to room temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)00437-X].
引用
收藏
页码:1822 / 1824
页数:3
相关论文
共 16 条
  • [11] ULTRATHIN SIMGEN STRAINED LAYER SUPERLATTICES - A STEP TOWARDS SI OPTOELECTRONICS
    PRESTING, H
    KIBBEL, H
    JAROS, M
    TURTON, RM
    MENCZIGAR, U
    ABSTREITER, G
    GRIMMEISS, HG
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (09) : 1127 - 1148
  • [12] PHOTOLUMINESCENCE STUDY OF THE CROSSOVER FROM 2-DIMENSIONAL TO 3-DIMENSIONAL GROWTH FOR GE ON SI(100)
    SCHITTENHELM, P
    GAIL, M
    BRUNNER, J
    NUTZEL, JF
    ABSTREITER, G
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (09) : 1292 - 1294
  • [13] Photoluminescence of charged InAs self-assembled quantum dots
    Schmidt, KH
    Medeiros-Ribeiro, G
    Petroff, PM
    [J]. PHYSICAL REVIEW B, 1998, 58 (07): : 3597 - 3600
  • [14] Photoluminescence study of the initial stages of island formation for Ge pyramids/domes and hut clusters on Si(001)
    Schmidt, OG
    Lange, C
    Eberl, K
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (13) : 1905 - 1907
  • [15] Electroluminescence of erbium-oxygen-doped silicon diodes grown by molecular beam epitaxy
    Stimmer, J
    Reittinger, A
    Nutzel, JF
    Abstreiter, G
    Holzbrecher, H
    Buchal, C
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (23) : 3290 - 3292
  • [16] PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON
    WAGNER, J
    [J]. PHYSICAL REVIEW B, 1984, 29 (04): : 2002 - 2009