PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON

被引：123

作者：

WAGNER, J

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.29.2002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2002 / 2009

页数：8

共 22 条

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