Photoluminescence study of the initial stages of island formation for Ge pyramids/domes and hut clusters on Si(001)

被引：127

作者：

Schmidt, OG ^{[1
]}

Lange, C ^{[1
]}

Eberl, K ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 13期

关键词：

D O I：

10.1063/1.124867

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stranski-Krastanov growth of Ge on Si(001) can result in various different types of islands such as domes, pyramids, and hut clusters. A systematic study of the impact of the different island phases on photoluminescence (PL) spectra is presented and reveals simultaneous PL from the wetting layer and islands in the pyramids/domes phase and only island related PL in the phase of hut clusters. A rather abrupt transformation from pyramids/domes to hut clusters is reported by changing the growth temperature from 600 to 580 degrees C. The wetting layer and island related energy transitions as a function of Ge coverage are presented for growth temperatures ranging from 360 to 700 degrees C. At T(s) = 360 degrees C no island formation is present. The influence of Oswald ripening and material interdiffusion on the PL properties is discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)01639-3].

引用

页码：1905 / 1907

页数：3

共 18 条

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