Nucleation and growth of self-assembled Ge/Si(001) quantum dots

被引:67
作者
Le Thanh, V
Boucaud, P
Debarre, D
Zheng, Y
Bouchier, D
Lourtioz, JM
机构
[1] Univ Paris Sud, URA CNRS 22, Inst Elect Fondamentale, F-91405 Orsay, France
[2] Univ Paris 06, URA CNRS 09, Lab Mineral Cristallog, F-75252 Paris 5, France
来源
PHYSICAL REVIEW B | 1998年 / 58卷 / 19期
关键词
D O I
10.1103/PhysRevB.58.13115
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In situ reflection high-energy electron diffraction along with atomic-force microscopy and photoluminescence spectroscopy have been used to investigate the Ge/Si(001) growth process in an ultrahigh-vacuum chemical-vapor-deposition system at temperatures varying from 550 to 700 degrees C. The existence of an intermediate phase between entirely pseudomorphic two-dimensional (2D) layers and 30 macroscopic islands is established. This phase which consists of pyramidal clusters with a squared base and {105} facets is found to be metastable with regard to the formation of 3D macroscopic islands. Two kinetic pathways for the growth of 3D macroscopic islands are identified versus growth temperature. At 550 degrees C the growth proceeds near equilibrium configuration and islands of monosize distribution can be formed. At 700 degrees C, coalescence is found to take place even at the early stage of growth, which results in the formation of highly inhomogeneous islands. [S0163-1829(98)03443-2].
引用
收藏
页码:13115 / 13120
页数:6
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