PHOTOLUMINESCENCE STUDY OF THE CROSSOVER FROM 2-DIMENSIONAL TO 3-DIMENSIONAL GROWTH FOR GE ON SI(100)

被引：159

作者：

SCHITTENHELM, P

GAIL, M

BRUNNER, J

NUTZEL, JF

ABSTREITER, G

机构：

[1] Walter Schottky Institut, TU München, 85748 Garching, Am Coulombwall

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 09期

关键词：

D O I：

10.1063/1.114401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Narrow Ge layers embedded in Si are investigated using photoluminescence (PL) spectroscopy. With increasing layer thickness a growth mode changeover from two-dimensional (2D) strained-layer growth to three dimensional Stranski-Krastanov growth is observed. Additional PL lines that are redshifted with respect to the PL signal of the 2D strained layers are attributed to islands forced by three-dimensional growth. The occurrence of these new lines is accompanied by a blueshift of the PL of the 2D layers, indicating a strong Ge diffusion from the 2D layers towards the islands. (C) 1995 American Institute of Physics.

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页码：1292 / 1294

页数：3

相关论文

共 17 条

[1] PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF SIGE DOTS FABRICATED ISLAND GROWTH [J].

APETZ, R ;

VESCAN, L ;

HARTMANN, A ;

DIEKER, C ;

LUTH, H .

APPLIED PHYSICS LETTERS, 1995, 66 (04) :445-447

[2] LUMINESCENCE STUDIES OF CONFINED EXCITONS IN PSEUDOMORPHIC SI/SIGE QUANTUM-WELLS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY [J].

BRUNNER, J ;

NUTZEL, J ;

GAIL, M ;

MENCZIGAR, U ;

ABSTREITER, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :1097-1100

[3]

CARLSSON N, 1994, APPL PHYS LETT, V65, P3094

[4] STRAINED STATE OF GE(SI) ISLANDS ON SI - FINITE-ELEMENT CALCULATIONS AND COMPARISON TO CONVERGENT-BEAM ELECTRON-DIFFRACTION MEASUREMENTS [J].

CHRISTIANSEN, S ;

ALBRECHT, M ;

STRUNK, HP ;

MAIER, HJ .

APPLIED PHYSICS LETTERS, 1994, 64 (26) :3617-3619

[5] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[6] OPTICAL STUDY OF DIFFUSION LIMITATION IN MBE GROWTH OF SIGE QUANTUM-WELLS [J].

GAIL, M ;

BRUNNER, J ;

NUTZEL, J ;

ABSTREITER, G ;

ENGVALL, J ;

OLAJOS, J ;

GRIMMEISS, H .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (03) :319-325

[7] INTERFACIAL ENERGIES PROVIDING A DRIVING-FORCE FOR GE/SI HETEROEPITAXY [J].

HANSSON, PO ;

ALBRECHT, M ;

DORSCH, W ;

STRUNK, HP ;

BAUSER, E .

PHYSICAL REVIEW LETTERS, 1994, 73 (03) :444-447

[8] DIMENSIONALITY AND CRITICAL SIZES OF GESI ON SI(100) [J].

HANSSON, PO ;

ALBRECHT, M ;

STRUNK, HP ;

BAUSER, E ;

WERNER, JH .

THIN SOLID FILMS, 1992, 216 (02) :199-202

[9] NANOSCALE INP ISLANDS EMBEDDED IN INGAP [J].

KURTENBACH, A ;

EBERL, K ;

SHITARA, T .

APPLIED PHYSICS LETTERS, 1995, 66 (03) :361-363

[10] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205