Ge Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor

We report on the structural and optical properties of Ge/Si self-assembled quantum dots epitaxially grown on Si(001). The Ge islands are grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The surface density of the Ge islands is as much as 2x10(10) cm(-2). The islands exhibit a maximum photoluminescence at 1.55 mu m wavelength. The photoluminescence energy is correlated to the three-dimensional quantum confinement energy and to the size and geometry of the clusters, as observed by cross-section transmission electron microscopy. (C) 1999 American Institute of Physics. [S0021-8979(99)00713-6].