Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized islands on InP(001)

被引：9

作者：

Marchand, H

Desjardins, P

Guillon, S

Paultre, JE

Bougrioua, Z

Yip, RYF

Masut, RA

机构：

[1] Grp. Rech. Phys. Technol. Couches M., Dept. de Génie Physique, Ecl. Polytech. de Montréal, Montréal, Que. H3C 3A7, C.P. 6079, Succursale Centre-Ville

[2] Dept. of Elec. and Comp. Engineering, University of California, Santa Barbara

[3] Coordinated Science Laboratory, Univ. Illinois at Urbana-Champaign, Urbana, IL 61801

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1997年 / 26卷 / 10期

基金：

加拿大自然科学与工程研究理事会;

关键词：

indium arsenide; indium phosphide; organometallic vapor phase epitaxy; self-assembled islands; strain relaxation; surface morphology;

D O I：

10.1007/s11664-997-0021-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-assembled InAs islands were grown by metalorganic vapor phase epitaxy on InP(001) and characterized by atomic force microscopy and transmission electron microscopy. The growth temperature (450-600 degrees C), the InAs deposition time (3-12 s, using a growth rate of similar to 2.3 Angstrom/s), and the growth interruption time (8-240 s) were varied systematically in order to investigate the effect of thermodynamic and kinetic factors on the structural properties of InAs/InP and InP/InAs/InP structures. It is found that the structural properties of islands vary widely with the growth conditions, ranging from very small (4-5 nm height, similar to 30-60 nm in diameter) coherent islands at low temperature (450-500 degrees C) to large (similar to 350 nm wide) plastically relaxed islands at high temperature (600 degrees C). For a given deposition time, the height of the coherent islands increases markedly with the growth temperature while their diameter shows only a moderate increase. The growth interruption time also affects the formation and the evolution of islands, which clearly shows that these processes are kinetically limited. Coherent islands with structural properties suitable for use in optoelectronic devices are obtained from similar to 2.4-4.8 monolayer thick InAs layers using a growth temperature of 500 degrees C and a 30 s interruption time.

引用

页码：1205 / 1213

页数：9

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