Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications

被引：31

作者：

Pyun, Myeongbum ^{[1
]}

Choi, Hyejung ^{[1
]}

Park, Ju-Bong ^{[1
]}

Lee, Dongsoo ^{[1
]}

Hasan, Musarrat ^{[1
]}

Dong, Rui ^{[1
]}

Jung, Seung-Jae ^{[1
]}

Lee, Joonmyoung ^{[1
]}

Seong, Dong-jun ^{[1
]}

Yoon, Jaesik ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 21期

关键词：

carbon; copper; random-access storage; reliability;

D O I：

10.1063/1.3039064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated copper-doped carbon (CuC) as a new solid-state electrolyte material for resistive switching devices. Compared with CuS electrolytes, CuC devices demonstrate good memory characteristics such as a high resistance ratio of over two orders, higher operation voltage, and high temperature retention characteristics. Using 1000 cell array devices, we have also confirmed uniform distributions of resistance and switching voltages. Both high and low resistance states showed negligible degradation of resistance for over 10(4) s at 85 degrees C, confirming good retention characteristics.

引用

页数：3

共 21 条

[1]

[Anonymous], 2007, INT TECHNOLOGY ROADM

[2] A novel resistance memory with high scalability and nanosecond switching [J].

Aratani, K. ;

Ohba, K. ;

Mizuguchi, T. ;

Yasuda, S. ;

Shiimoto, T. ;

Tsushima, T. ;

Sone, T. ;

Endo, K. ;

Kouchiyama, A. ;

Sasaki, S. ;

Maesaka, A. ;

Yamada, N. ;

Narisawa, H. .

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :783-786

[3] Effect of ion diffusion on switching voltage of solid-electrolyte nanometer switch [J].

Banno, Naoki ;

Sakamoto, Toshitsuyu ;

Hasegawa, Tsuyoshi ;

Terabe, Kazuya ;

Aono, Masakazu .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B) :3666-3668

[4]

Chen GL, 1999, SURF INTERFACE ANAL, V28, P245, DOI 10.1002/(SICI)1096-9918(199908)28:1<245::AID-SIA586>3.0.CO

[5]

2-I

[6]

Fang T.-N., 2006, IEDM, P1, DOI [10.1109/IEDM.2006.346731, DOI 10.1109/IEDM.2006.346731]

[7] Copper nanocluster diffusion in carbon nanotube [J].

Hwang, HJ ;

Kwon, OK ;

Kang, JW .

SOLID STATE COMMUNICATIONS, 2004, 129 (11) :687-690

[8]

IGNATIEV A, 2006, NONV MEM TECHN UNPUB, P100

[9] Diffusion barrier properties of TaC between Si and Cu [J].

Imahori, J ;

Oku, T ;

Murakami, M .

THIN SOLID FILMS, 1997, 301 (1-2) :142-148

[10] Nanoscale memory elements based on solid-state electrolytes [J].

Kozicki, MN ;

Park, M ;

Mitkova, M .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (03) :331-338

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