Carrier relaxation dynamics in an ultrafast all-optical modulator using an intersubband transition

被引：17

作者：

Asano, T ^{[1
]}

Yoshizawa, S ^{[1
]}

Noda, S ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 27期

关键词：

D O I：

10.1063/1.1427154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An improvement of an all-optical modulation scheme that utilizes an intersubband transition is proposed and investigated in connection with intersubband carrier relaxation dynamics. N-doped GaAs/AlGaAs quantum wells are pumped by an ultrashort (similar to 120 fs) intersubband-resonant pulse and probed by an interband-resonant white-light continuum. Ultrafast modulation speed of similar to0.4 ps is demonstrated, which is faster than that of the previous scheme by as much as a factor of 10. It is found that a large part of the carriers, which are excited from the first conduction subband to the second conduction subband, transfer to unknown trapping states at a relaxation time that is comparable to that of the pump-pulse duration. The existence of the carrier relaxation path via L valley subbands is strongly suggested as the cause. (C) 2001 American Institute of Physics.

引用

页码：4509 / 4511

页数：3

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