INTERSUBBAND CARRIER RELAXATION IN HIGHLY EXCITED GAAS/GA1-XALXAS MULTIPLE QUANTUM-WELLS

被引：54

作者：

LEVENSON, JA

DOLIQUE, G

OUDAR, JL

ABRAM, I

机构：

[1] Laboratoire de Bagneux, Centre National d Etudes des Telecommunications, 92220 Bagneux

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.41.3688

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the dynamics of the intersubband relaxation of electrons by injecting photoexcited carriers in the first three subbands of GaAs/Ga1-xAlxAs multiple quantum wells. The intersubband relaxation rate is measured as a function of the subband separation energy by using samples with different well widths. While the electron LO-phonon interaction appears to be the dominant energy-dissipation mechanism, the relaxation rate displays a very slow variation and not an abrupt threshold at the LO-phonon energy, when the energy separation is varied. A simple model taking into account the finite electronic temperature and the occupation of final states can explain our results. © 1990 The American Physical Society.

引用

页码：3688 / 3694

页数：7

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