Low voltage operating InGaZnO4 thin film transistors using high-k MgO-Ba0.6Sr0.4TiO3 composite gate dielectric on plastic substrate

被引：43

作者：

Kim, Dong Hun ^{[2
]}

Cho, Nam Gyu ^{[2
]}

Kim, Ho-Gi ^{[2
]}

Kim, Hyun-Suk ^{[3
]}

Hong, Jae-Min ^{[1
]}

Kim, Il-Doo ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Ctr Energy Mat Res, Seoul 130650, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 03期

关键词：

D O I：

10.1063/1.2954014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the dielectric and leakage current properties of room temperature grown MgO-Ba0.6Sr0.4TiO3 (MgO-BST) composite thin films to be utilized InGaZnO4 thin films transistors (TFTs) fabricated on a polyethylene terephthalate (PET) substrate. The InGaZnO4 TFTs with MgO-BST gate dielectrics exhibited low operation voltage of 4 V, high on/off current ratio of 4.13x10(6), and high field effect mobility of 10.86 cm(2)/V s. These results verify that a room temperature grown MgO-BST gate dielectric is a good candidate for producing high performance InGaZnO4 TFTs on plastic substrates. (C) 2008 American Institute of Physics.

引用

页数：3

共 14 条

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