Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors

Indium gallium zinc oxide deposited by pulsed laser deposition at room temperature was used as a channel layer to fabricate transparent thin film transistors with good electrical characteristics: field effect mobility of 11 cm(2) V-1 s(-1) and subthreshold voltage swing of 0.20 V/decade. By varying the oxygen partial pressure during deposition the conductivity of the channel was controlled to give a low off-current of similar to 10 pA and a drain current on/off ratio of similar to 5x10(7). Changing the channel layer thickness was a viable way to vary the threshold voltage. The effect of the gate dielectric on the electrical behavior was also explored. (c) 2007 American Institute of Physics.