Thin films of VO2 on glass by atomic layer deposition: microstructure and electrical properties

Thin films of semiconducting, monoclinic, VO2(M) have been deposited on glass by atomic layer deposition (ALD). The composition and microstructure of the films have been examined by X-ray diffraction and scanning electron microscopy (SEM). The films deposited are VO2(M) phase, as deposited, and have been obtained at temperatures as low as 400 degrees C. The films comprise largely of platelet morphology as illustrated by SEM. The semiconductor-metal transition near 340K leads to a large jump in resistivity in all the VO2(M) films, on glass, as deposited. The formation of VO2(M) phase has been shown to occur under very specific ALD conditions (ALD window). Growth kinetics, microstructure, and electrical properties have been studied as a function of deposition temperature. (C) 2004 Published by Elsevier B.V.