Three-dimensional atomic-scale imaging of boron clusters in implanted silicon

被引：25

作者：

Cojocaru-Miredin, O. ^{[1
]}

Cadel, E. ^{[1
]}

Vurpillot, F. ^{[1
]}

Mangelinck, D. ^{[2
,3
]}

Blavette, D. ^{[1
,4
]}

机构：

[1] Univ Rouen, GPM, CNRS, UMR 6634, F-76801 St Etienne De Rouvray, France

[2] Aix Marseille Univ, Fac St Jerome, IM2NP, UMR 6242, F-13397 Marseille, France

[3] CNRS, Fac St Jerome, IM2NP, UMR 6242, F-13397 Marseille, France

[4] Inst Univ France, Paris, France

来源：

SCRIPTA MATERIALIA | 2009年 / 60卷 / 05期

关键词：

Laser atom probe tomography; Microelectronics; Implanted silicon; Boron; Clustering; LOCAL MAGNIFICATION; PROBE TOMOGRAPHY; DEFECTS; RECONSTRUCTION; OVERLAPS;

D O I：

10.1016/j.scriptamat.2008.10.008

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The implantation profile of boron in silicon annealed at 600 degrees C for 1 h as given by laser-assisted wide-angle atom probe was found to be in good agreement with secondary ion mass spectrometry data. Numerous boron clusters in the form tiny platelets (3-6 nm diameter, 2 nm thick) were identified and interpreted as boron interstitial clusters (BICs). These BICs contained on average 7 at.% B with a core level that reaches 10 at.%. (C) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：285 / 288

页数：4

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