Design of a femtosecond laser assisted tomographic atom probe

被引:270
作者
Gault, B
Vurpillot, F
Vella, A
Gilbert, M
Menand, A
Blavette, D
Deconihout, B [1 ]
机构
[1] Univ St Etienne, CNRS, UMR 6634, GPM, F-76801 St Etienne, France
[2] INSA, F-76801 St Etienne, France
关键词
D O I
10.1063/1.2194089
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A tomographic atom probe (TAP) in which the atoms are field evaporated by means of femtosecond laser pulses has been designed. It is shown that the field evaporation is assisted by the laser field enhanced by the subwavelength dimensions of the specimen without any significant heating of the specimen. In addition, as compared with the conventional TAP, due to the very short duration of laser pulses, no spread in the energy of emitted ions is observed, leading to a very high mass resolution in a straight TAP in a wide angle configuration. At last, laser pulses can be used to bring the intense electric field required for the field evaporation on poor conductive materials such as intrinsic Si at low temperature. In this article, the performance of the laser TAP is described and illustrated through the investigation of metals, oxides, and silicon materials. (c) 2006 American Institute of Physics.
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页数:8
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