High mobility organic thin film transistors based on monocrystalline rubrene films grown by low pressure hot wall deposition

被引：25

作者：

Chen, Yi ^{[1
]}

Shih, Ishiang ^{[1
]}

机构：

[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 08期

关键词：

grain size; high electron mobility transistors; organic field effect transistors; organic semiconductors; thin film transistors; SINGLE-CRYSTALS;

D O I：

10.1063/1.3089572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Monocrystalline rubrene (5,6,11,12-tetraphenylnaphthacene) films with thickness between 1 and 10 mu m and grain sizes as large as 100 mu mx2 mm were deposited on thin film transistor substrates at rates similar to 500 nm/min by a low pressure and hot wall deposition method. Organic thin film transistors with these high quality thin films as active channels have field effect mobility as high as 2.4 cm(2)/V s and ON/OFF current ratios around 10(6). The morphology and crystallinity of rubrene films under different deposition conditions were also studied to determine the optimal film deposition conditions.

引用

页数：3

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