Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements

被引：17

作者：

Hader, J ^{[1
]}

Zakharian, AR

Moloney, JV

Nelson, TR

Siskaninetz, WJ

Ehret, JE

Hantke, K

Hofmann, M

Koch, SW

机构：

[1] Univ Arizona, Arizona Ctr Math Sci, Tucson, AZ 85721 USA

[2] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA

[3] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

[4] Ruhr Univ Bochum, Inst Werkstoffe Elektrotech, D-44780 Bochum, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 06期

关键词：

gain; photo luminescence; semiconductor lasers;

D O I：

10.1109/LPT.2002.1003085

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated.

引用

页码：762 / 764

页数：3

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