The effect of metal thickness, overlayer and high-k surface treatment on the effective work function of metal electrode

被引：38

作者：

Choi, K ^{[1
]}

Wen, HC ^{[1
]}

Alshareef, H ^{[1
]}

Harris, R ^{[1
]}

Lysaght, P ^{[1
]}

Luan, H ^{[1
]}

Majhi, P ^{[1
]}

Leee, BH ^{[1
]}

机构：

[1] SEMATECH, Austin, TX 78741 USA

来源：

PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2005年

关键词：

D O I：

10.1109/ESSDER.2005.1546595

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate that the effective work function (EWF) of atomic layer deposited (ALD) TiN electrodes is a function of the TiN film thickness and that the metal/dielectric interface and the bulk metal film influence this measured response. It is shown that anneal treatments and chemical processing of the underlying dielectric surface prior to electrode deposition may be exploited to modify the effective work function of metal electrodes. The effect of physical vapor deposited (PVD) and ALD metal over-layers on the effective work function of metal electrodes is also presented.

引用

页码：101 / 104

页数：4

共 8 条

[1]

AKBAR M, 2004, IEEE ELECTR DEVICE L, V26, P163

[2]

BROWN G, 2004, IEEE SISC C

[3]

JEON IS, IEDM, P2004

[4] The physical properties of cubic plasma-enhanced atomic layer deposition TaN films [J].