A dual-metal gate CMOS technology using nitrogen-concentration-controlled TiNx film

被引：38

作者：

Wakabayashi, H ^{[1
]}

Saito, Y ^{[1
]}

Takeuchi, K ^{[1
]}

Mogami, T ^{[1
]}

Kunio, T ^{[1
]}

机构：

[1] NEC Corp Ltd, Silicon Syst Res Labs, Kanagawa 2291198, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 10期

关键词：

CMOS; dual-metal gate electrodes; low-doped channel; NI/I; titanium nitride; work function;

D O I：

10.1109/16.954478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel dual-metal gate CMOS technology using nitrogen-concentration-controlled TiNx film is described. It is based on a new finding that threshold voltage (V-th) depends on the concentration of nitrogen in the TiNx gate electrode. We found that a V-th shift as high as -110 mV is controlled by low-energy nitrogen-ion implantation (N VI) into the titanium nitride film. By using this technology only for nMOSFETs, dual-metal gate CMOS devices are fabricated with a CMOS-process compatibility. A low V-th is achieved for both n- and pMOSFETs by combining N I/I and a low-doped channel structure.

引用

页码：2363 / 2369

页数：7

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