Electron field emission from diamond tips prepared by ion sputtering

被引：35

作者：

Nutzenadel, C ^{[1
]}

Kuttel, OM ^{[1
]}

Groning, O ^{[1
]}

Schlapbach, L ^{[1
]}

机构：

[1] UNIV FREIBURG,INST PHYS,CH-1700 FRIBOURG,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 18期

关键词：

D O I：

10.1063/1.117551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we report the field emission from cones etched into a synthetic-type IIb (100) oriented boron-doped diamond crystal. The cones were produced with an ion sputtering process. With a high-resolution scanning electron microscope we found the curvature radius at the end of the cones to be less than 10 nm. The length of these cones is in the range of 10 mu m giving a field enhancement of approx. 1000. Field emission started at field strength of 2 V/mu m, and at 3.8 V/mu m 10 nA were measured using a spherical anode of 4 mm diam. From a Fowler-Nordheim fit the work function could be deduced to be 3-4 eV. Hence, electrons are emitted from the valence band. (C) 1996 American Institute of Physics.

引用

页码：2662 / 2664

页数：3

共 21 条

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