共 35 条
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HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPIC STUDY OF EPITAXIALLY GROWN DIAMOND (111) AND (100) SURFACES
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PHYSICAL REVIEW B,
1993, 48 (24)
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[2]
THERMAL HYDROGENATION OF DIAMOND SURFACES STUDIED BY DIFFUSE REFLECTANCE FOURIER-TRANSFORM INFRARED, TEMPERATURE-PROGRAMMED DESORPTION AND LASER RAMAN-SPECTROSCOPY
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JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS,
1993, 89 (11)
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[3]
ELECTRIC PROPERTIES OF METAL DIAMOND INTERFACES UTILIZING HYDROGEN-TERMINATED SURFACES OF HOMOEPITAXIAL DIAMONDS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1994, 33 (5B)
:L708-L711
[6]
STABILITY, RECONSTRUCTION, AND ELECTRONIC-PROPERTIES OF DIAMOND (100) AND (111) SURFACES
[J].
PHYSICAL REVIEW B,
1993, 48 (24)
:18189-18202
[7]
ADSORPTION OF HYDROGEN ON THE (001) SURFACE OF DIAMOND
[J].
PHYSICAL REVIEW B,
1993, 47 (15)
:9556-9560
[8]
EPITAXIAL-GROWTH OF SILICON ON SI(001) BY SCANNING TUNNELING MICROSCOPY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1990, 8 (01)
:195-200