Kinetic pathways to strain relaxation in the Si-Ge system

被引：111

作者：

Jesson, DE ^{[1
]}

Chen, KM ^{[1
]}

Pennycook, SJ ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,ELECTRON MICROSCOPY GRP,OAK RIDGE,TN 37831

来源：

MRS BULLETIN | 1996年 / 21卷 / 04期

关键词：

D O I：

10.1557/S0883769400035314

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

收藏

页码：31 / 37

页数：7

相关论文

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