Temperature dependence of Q and inductance in spiral inductors fabricated in a silicon-germanium/BiCMOS technology

被引：62

作者：

Groves, R

Harame, DL

Jadus, D

机构：

[1] IBM Microelectronic Division, Hopewell Junction

[2] IBM, Essex Junction

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1997年 / 32卷 / 09期

关键词：

microwave devices; modeling; spiral inductors; temperature;

D O I：

10.1109/4.628763

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The behavior of on-chip, planar, spiral inductors fabricated over a conductive silicon substrate has been characterized over the temperature range from -55 degrees C to +125 degrees C. Quality factor (Q) was observed to decrease with increasing temperature at low frequency and increase with increasing temperature at high frequency, Inductance was seen to vary little over the temperature and frequency range. A SPICE model that incorporated the temperature dependence of the inductor's parasitics was presented and shown to give excellent agreement with measured data over the full temperature and frequency range.

引用

页码：1455 / 1459

页数：5

共 8 条

[1]

ASHBY KB, 1994 BCTM P, P179

[2] S-PARAMETER-BASED IC INTERCONNECT TRANSMISSION-LINE CHARACTERIZATION [J].

EISENSTADT, WR ;

EO, YS .

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1992, 15 (04) :483-490

[3] HIGH-SPEED VLSI INTERCONNECT MODELING BASED ON S-PARAMETER MEASUREMENTS [J].

EO, Y ;

EISENSTADT, WR .

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1993, 16 (05) :555-562

[4] DESIGN OF PLANAR RECTANGULAR MICROELECTRONIC INDUCTORS [J].

GREENHOUSE, HM .

IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1974, PH10 (02) :101-109

[5]

GROVES R, 1996 BCTM P, P153

[6] SI/SIGE EPITAXIAL-BASE TRANSISTORS .1. MATERIALS, PHYSICS, AND CIRCUITS [J].

HARAME, DL ;

COMFORT, JH ;

CRESSLER, JD ;

CRABBE, EF ;

SUN, JYC ;

MEYERSON, BS ;

TICE, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (03) :455-468

[7]

VANWIJNEN PJ, 1987 BCTM P, P70

[8]

YUE CP, 1996 IEDM P, P155

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