Self-powered flexible and transparent photovoltaic detectors based on CdSe nanobelt/graphene Schottky junctions

被引：83

作者：

Gao, Zhiwei ^{[1
,2
]}

Jin, Weifeng ^{[1
,2
]}

Zhou, Yu ^{[3
]}

Dai, Yu ^{[1
,2
]}

Yu, Bin ^{[1
,2
]}

Liu, Chu ^{[1
,2
]}

Xu, Wanjin ^{[1
,2
]}

Li, Yanping ^{[1
,2
]}

Peng, Hailin ^{[3
]}

Liu, Zhongfan ^{[3
]}

Dai, Lun ^{[1
,2
]}

机构：

[1] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Peking Univ, Sch Phys, Beijing 100871, Peoples R China

[3] Peking Univ, Coll Chem & Mol Engn, Beijing 100871, Peoples R China

来源：

NANOSCALE | 2013年 / 5卷 / 12期

基金：

中国国家自然科学基金;

关键词：

PHOTORESPONSE PROPERTIES; PHOTODETECTORS; TRANSISTORS;

D O I：

10.1039/c3nr34335a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Flexible and transparent electronic and optoelectronic devices have attracted more and more research interest due to their potential applications in developing portable, wearable, low-cost, and implantable devices. We have fabricated and studied high-performance flexible and transparent CdSe nanobelt (NB)/graphene Schottky junction self-powered photovoltaic detectors for the first time. Under 633 nm light illumination, typical photosensitivity and responsivity of the devices are about 1.2 x 10(5) and 8.7 A W-1, respectively. Under 3500 Hz switching frequency, the response and recovery times of them are about 70 and 137 mu s, respectively, which, to the best of our knowledge, are the best reported values for nanomaterial based Schottky junction photodetectors up to date. The detailed properties of the photodetectors, such as the influences of incident light wavelength and light intensity on the external quantum efficiency and speed, are also investigated. Detailed discussions are made in order to understand the observed phenomena. Our work demonstrates that the self-powered flexible and transparent CdSe NB/graphene Schottky junction photovoltaic detectors have a bright application prospect.

引用

页码：5576 / 5581

页数：6

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