Performance of SrBi2Ta2O9 for low-voltage, non-volatile memory applications

被引：10

作者：

Jones, RE

Zurcher, P

Chu, P

Taylor, DJ

Zafar, S

Jiang, B

Gillespie, SJ

机构：

[1] Mat. Res. and Strategic Technologies, Motorola 3501 Ed Bluestein Blvd., MD-K10, Austin

来源：

INTEGRATED FERROELECTRICS | 1997年 / 15卷 / 1-4期

关键词：

D O I：

10.1080/10584589708015711

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of SrBi2Ta2O9 for ferroelectric non-volatile memory applications is investigated. The temperature dependence of the hysteresis loops, small signal capacitance-voltage measurements, and fatigue resistance are reported. Increasing temperature accelerates fatigue, but excellent fatigue resistance to greater than 10(12) cycles is found for temperatures of 125 degrees C and below. The difference between current-time curves for switched and unswitched capacitors using high-speed pulse measurements indicated the availability of 5.7 mu C/cm(2) for 3 V memory operation.

引用

页码：199 / 210

页数：12

共 17 条

[1] PREPARATION AND FERROELECTRIC PROPERTIES OF SRBI2TA2O9 THIN-FILMS [J].