Proposal and analysis of very short channel field effect transistor using vertical tunneling with new heterostructures on silicon

We propose and analyze a very short channel tunneling field effect transistor using new heterostructures (CoSi2/Si/CdF2/CaF2) lattice-matched to Si substrate. In device operation, drain current from source (CoSi2) to drain (CoSi2) through tunneling barriers (Si) and channel (CdF2) is controlled by gate electric field applied to the barrier between source and channel through gate insulator (CaF2). Theoretical analysis shows that this transistor has characteristics similar to those of conventional metal- oxide-semiconductor field effect transistors even with the channel lengths of 20 nm and 5 nm.