SCHOTTKY-BARRIER HEIGHTS OF SINGLE-CRYSTAL SILICIDES ON SI(111)

被引：68

作者：

TUNG, RT

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582896

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：465 / 470

页数：6

共 50 条

[1] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].

ANDREWS, JM ;

PHILLIPS, JC .

PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59

[2] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].

ANDREWS, JM ;

LEPSELTER, MP .

SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+

[3] FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE [J].

ANDREWS, JM ;

KOCH, FB .

SOLID-STATE ELECTRONICS, 1971, 14 (10) :901-&

[4] RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO [J].

BACHRACH, RZ ;

BAUER, RS ;

CHIARADIA, P ;

HANSSON, GV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :335-343

[5] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[6] ON THE DEPENDENCE OF SCHOTTKY-BARRIER HEIGHT AND INTERFACE STATES UPON INITIAL SEMICONDUCTOR SURFACE PARAMETERS IN GAAS (001)/AL JUNCTIONS [J].

BARRET, C ;

MASSIES, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :819-824

[7]

BRASEN D, UNPUB

[8] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[9] PHOTOEMISSION AND BAND-STRUCTURE RESULTS FOR NISI-2 [J].

CHABAL, YJ ;

HAMANN, DR ;

ROWE, JE ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1982, 25 (12) :7598-7602

[10] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J].

CHERNS, D ;

ANSTIS, GR ;

HUTCHISON, JL ;

SPENCE, JCH .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05) :849-862

← 1 2 3 4 5 →