ON THE DEPENDENCE OF SCHOTTKY-BARRIER HEIGHT AND INTERFACE STATES UPON INITIAL SEMICONDUCTOR SURFACE PARAMETERS IN GAAS (001)/AL JUNCTIONS

被引：21

作者：

BARRET, C ^{[1
]}

MASSIES, J ^{[1
]}

机构：

[1] CNRS SOPHIA ANTIPOLIS, PHYS SOLIDE & ENERGIE SOLAIRE LAB, F-06530 VALBONNE, FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582699

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：819 / 824

页数：6

共 40 条

[1] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS
ALLEN, RE
DOW, JD
[J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1423 - 1426
[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[3] STUDY OF METAL-SEMICONDUCTOR INTERFACE STATES USING SCHOTTKY CAPACITANCE SPECTROSCOPY
BARRET, C
CHEKIR, F
VAPAILLE, A
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (12): : 2421 - 2438
[4] DETERMINATION OF DENSITY AND RELAXATION-TIME OF SILICON-METAL INTERFACIAL STATES
BARRET, C
VAPAILLE, A
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (01) : 25 - 27
[5] INTERFACE STATES IN A CLEAVED METAL-SILICON JUNCTION
BARRET, C
VAPAILLE, A
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4217 - 4222
[6] ROOM-TEMPERATURE FORMATION OF THE AG/GAAS (110) INTERFACE
BOLMONT, D
CHEN, P
PROIX, F
SEBENNE, CA
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (16): : 3639 - 3648
[7] ELECTRONIC-PROPERTIES OF GA/GAAS(110) UPON INTERFACE FORMATION
BOLMONT, D
CHEN, P
SEBENNE, CA
[J]. SURFACE SCIENCE, 1982, 117 (1-3) : 417 - 425
[8] BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177
[9] FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES
BRILLSON, LJ
BRUCKER, CF
KATNANI, AD
STOFFEL, NG
DANIELS, R
MARGARITONDO, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 564 - 569
[10] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
CHAI, YG
CHOW, R
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798

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