SCHOTTKY-BARRIER HEIGHTS OF SINGLE-CRYSTAL SILICIDES ON SI(111)

被引：68

作者：

TUNG, RT

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582896

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：465 / 470

页数：6

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