STUDY OF BAND OFFSETS IN CDF2/CAF2/SI(111) HETEROSTRUCTURES USING X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：55

作者：

IZUMI, A ^{[1
]}

HIRAI, Y ^{[1
]}

TSUTSUI, K ^{[1
]}

SOKOLOV, NS ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,AF IOFFE PHYSICOTECH INST,ST PETERSBURG 194021,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 19期

关键词：

D O I：

10.1063/1.114595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The valence band offsets at the heterointerfaces of the CdF2/CaF2/Si(111) structure grown by molecular beam epitaxy were evaluated using x-ray photoelectron spectroscopy, and the energy band diagram of this heterostructure was proposed. It was found that the interface of CdF2/CaF2 has large conduction band offset: 2.9 eV, and the energy level of CdF2 conduction band edge is below that of Si. (C) 1995 American Institute of Physics.

引用

页码：2792 / 2794

页数：3

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