Self-assembled InAs quantum dots and wires grown on a cleaved-edge GaAs(110) surface

被引：15

作者：

Blumin, M. ^{[1
]}

Ruda, H. E. ^{[1
]}

Savelyev, I. G. ^{[1
]}

Shik, A. ^{[1
]}

Wang, H. ^{[1
]}

机构：

[1] Univ Toronto, Ctr Adv Nanotechnol, Toronto, ON M53 3E4, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 09期

关键词：

D O I：

10.1063/1.2197027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the conditions for the Stranski-Krastanov mode of molecular beam epitaxial growth of InAs on a cleaved GaAs(110) surface. Temperature distributions on a subholder with cleaved facets were revealed using thermophotography. Combining these data with a theoretical model enabled a determination of the real temperature on the cleaved-edge surfaces (110), which differed markedly from the temperature on a planar wafer (100). Based on these results, we proposed an approach that combines different growth conditions in one technological process. As a result, appropriate growth conditions were established for InAs quantum dots grown on the cleaved GaAs(110) surface. Control over the dot nucleation process was shown to permit growth of both linear arrays of quantum dots and planar quantum wires on these (110) surfaces. (C) 2006 American Institute of Physics.

引用

页数：7

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