Stranski-Krastanow transition and epitaxial island growth

被引：116

作者：

Cullis, AG

Norris, DJ

Walther, T

Migliorato, MA

Hopkinson, M

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[2] Univ Bonn, Inst Anorgan Chem, D-53117 Bonn, Germany

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.66.081305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A detailed examination is presented of the way in which the Stranski-Krastanow epitaxial islanding transition can be controlled by strain due to elemental segregation within the initially-formed flat "wetting" layer. Calculations using a segregation model are shown to accord well with experimentally measured critical wetting-layer thicknesses for the InxGa1-xAs/GaAs system (x=0.25-1). The strain energy associated with the segregated surface layer is determined for the complete range of deposited In concentrations using atomistic simulations. The segregation-mediated driving force for the Stranski-Krastanow transition is considered also to be important for all other epitaxial systems exhibiting the transition.

引用

收藏

页码：1 / 4

页数：4

相关论文

共 39 条

[1]

[Anonymous], SITZUNGSBER AK 2B MN

[2] Stranski-Krastanov growth of InSb, GaSb, and AlSb on GaAs: structure of the wetting layers [J].

Bennett, BR ;

Shanabrook, BV ;

Thibado, PM ;

Whitman, LJ ;

Magno, R .

JOURNAL OF CRYSTAL GROWTH, 1997, 175 :888-893

[3] STUDY OF THE 2-DIMENSIONAL 3-DIMENSIONAL GROWTH MODE TRANSITION IN METALORGANIC VAPOR-PHASE EPITAXY OF GAINP/INP QUANTUM-SIZED STRUCTURES [J].

CARLSSON, N ;

SEIFERT, W ;

PETERSSON, A ;

CASTRILLO, P ;

PISTOL, ME ;

SAMUELSON, L .

APPLIED PHYSICS LETTERS, 1994, 65 (24) :3093-3095

[4] Structural transition in large-lattice-mismatch heteroepitaxy [J].

Chen, Y ;

Washburn, J .

PHYSICAL REVIEW LETTERS, 1996, 77 (19) :4046-4049

[5] THE CHARACTERISTICS OF STRAIN-MODULATED SURFACE UNDULATIONS FORMED UPON EPITAXIAL SI1-XGEX ALLOY LAYERS ON SI [J].

CULLIS, AG ;

ROBBINS, DJ ;

PIDDUCK, AJ ;

SMITH, PW .

JOURNAL OF CRYSTAL GROWTH, 1992, 123 (3-4) :333-343

[6] Growth morphology evolution and dislocation introduction in the InGaAs/GaAs heteroepitaxial system [J].

Cullis, AG ;

Pidduck, AJ ;

Emeny, MT .

JOURNAL OF CRYSTAL GROWTH, 1996, 158 (1-2) :15-27

[7] KINETIC-MODEL OF ELEMENT-III SEGREGATION DURING MOLECULAR-BEAM EPITAXY OF III-III'-IV-SEMICONDUCTOR COMPOUNDS [J].

DEHAESE, O ;

WALLART, X ;

MOLLOT, F .

APPLIED PHYSICS LETTERS, 1995, 66 (01) :52-54

[8] Theory of quantum dot formation in Stranski-Krastanov systems [J].

Dobbs, HT ;

Vvedensky, DD ;

Zangwill, A .

APPLIED SURFACE SCIENCE, 1998, 123 :646-652

[9] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[10] ONE-DIMENSIONAL DISLOCATIONS .1. STATIC THEORY [J].

FRANK, FC ;

VANDERMERWE, JH .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :205-216

← 1 2 3 4 →