Growth morphology evolution and dislocation introduction in the InGaAs/GaAs heteroepitaxial system

被引:73
作者
Cullis, AG
Pidduck, AJ
Emeny, MT
机构
[1] DRA Malvern, Malvern, Worcs. WR14 3PS, St Andrews Road
关键词
D O I
10.1016/0022-0248(95)00430-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The present work examines in detail heteroepitaxial InxGa1-xAs alloy layers on GaAs by use of complementary transmission electron microscopy and atomic force microscopy. The characteristics of the low In x-value, smooth growth regime are established in terms of surface step configurations. Progressively increasing irregularities in step fronts and monolayer island formation with increasing In concentration in the alloy are linked with the transition to undulating growth as an x-value of 0.25 is approached. The evolution of high x-value roughened layers is studied and the structure changes with increasing film thickness and In content are determined. The manner in which final ripple arrays evolve from isolated islands is described and the stress interaction between islands is highlighted. The magnitude of the periodic elastic stress field which accompanies the formation of the ripple structures is microscopically measured and is shown to yield essentially complete misfit relief within the ripple crests. The increased stress present at ripple troughs is shown to lead to misfit defect source behaviour, which is expected to be of wide-ranging importance for defect generation in strained, undulating epitaxial films in general.
引用
收藏
页码:15 / 27
页数:13
相关论文
共 26 条
[1]   WRINKLING OF A FREE-SURFACE [J].
ANDREUSSI, F ;
GURTIN, ME .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3798-3799
[2]   ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME [J].
BERGER, PR ;
CHANG, K ;
BHATTACHARYA, P ;
SINGH, J ;
BAJAJ, KK .
APPLIED PHYSICS LETTERS, 1988, 53 (08) :684-686
[3]   NUCLEATION OF MISFIT DISLOCATIONS IN THIN-FILMS [J].
CHERNS, D ;
STOWELL, MJ .
SCRIPTA METALLURGICA, 1973, 7 (05) :489-493
[4]   EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES [J].
CULLIS, AG ;
BOOKER, GR .
JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) :132-&
[5]   MISFIT DISLOCATION SOURCES AT SURFACE RIPPLE TROUGHS IN CONTINUOUS HETEROEPITAXIAL LAYERS [J].
CULLIS, AG ;
PIDDUCK, AJ ;
EMENY, MT .
PHYSICAL REVIEW LETTERS, 1995, 75 (12) :2368-2371
[6]   THE CHARACTERISTICS OF STRAIN-MODULATED SURFACE UNDULATIONS FORMED UPON EPITAXIAL SI1-XGEX ALLOY LAYERS ON SI [J].
CULLIS, AG ;
ROBBINS, DJ ;
PIDDUCK, AJ ;
SMITH, PW .
JOURNAL OF CRYSTAL GROWTH, 1992, 123 (3-4) :333-343
[7]   GROWTH RIPPLES UPON STRAINED SIGE EPITAXIAL LAYERS ON SI AND MISFIT DISLOCATION INTERACTIONS [J].
CULLIS, AG ;
ROBBINS, DJ ;
BARNETT, SJ ;
PIDDUCK, AJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1994, 12 (04) :1924-1931
[8]  
CULLIS AG, 1991, INST PHYS CONF SER, P439
[9]   DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].
EAGLESHAM, DJ ;
CERULLO, M .
PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946
[10]   OBSERVATIONS OF ROUGHENING ON IN0.1GA0.9AS/GAAS SURFACES BY ATOMIC FORCE MICROSCOPY [J].
FATT, YS .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (04) :509-512