Stranski-Krastanov growth of InSb, GaSb, and AlSb on GaAs: structure of the wetting layers

被引：28

作者：

Bennett, BR

Shanabrook, BV

Thibado, PM

Whitman, LJ

Magno, R

机构：

[1] Naval Research Laboratory, Washington

[2] Department of Physics, University of Arkansas, Fayetteville

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

关键词：

D O I：

10.1016/S0022-0248(96)00917-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thin layers of InSb, GaSb and AlSb were grown on GcAs(001) by molecular beam epitaxy and characterized in situ with scanning tunneling microscopy. AII three materials exhibit a Stranski-Krastanov growth mode. Distinct wetting layers and self-assembled quantum dots are present after deposition of one to four monolayers of (In,Ga,Al)Sb. The wetting layers consist of anisotropic, ribbon-like structures oriented along the [101] direction. with characteristic separations of 40-50 Angstrom. The initial GaAs surface reconstruction affects both the wetting layer structure and the quantum dot density.

引用

页码：888 / 893

页数：6

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