Self-assembled InSb and GaSb quantum dots on GaAs(001)

被引：38

作者：

Bennett, BR

Thibado, PM

Twigg, ME

Glaser, ER

Magno, R

Shanabrook, BV

Whitman, LJ

机构：

[1] Naval Research Laboratory, Washington

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 03期

关键词：

D O I：

10.1116/1.588898

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum dots of InSb and GaSb were grown on GaAs(001) by molecular-beam epitaxy. In situ scanning tunneling microscopy measurements taken after 1-2 monolayers of InSb or GaSb growth reveal the surface is a network of anisotropic ribbon-like platelets. These platelets are a precursor to quantum dot growth. Transmission electron microscopy measurements indicate that the quantum dots are coherently strained. Quantum dots of InSb and GaSb capped by GaAs exhibit strong luminescence near 1.1 eV.

引用

页码：2195 / 2198

页数：4

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