ISLAND FORMATION OF INAS GROWN ON GAAS

被引:34
作者
NABETANI, Y
YAMAMOTO, N
TOKUDA, T
SASAKI, A
机构
[1] Department of Electrical Engineering, Kyoto University, Kyoto
关键词
D O I
10.1016/0022-0248(94)00562-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We observe the initial growth layer of InAs on a GaAs substrate by atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL) spectroscopy. The layer grows two-dimensionally until about 1.8 ML, and small islands which have a certain size are formed around 1.8 ML. Then, they grow to large sized islands after 2.0 ML, and the density of the small islands decreases. The sizes of large islands are not similar to each other. The plan-view TEM image reveals that the misfit dislocations are generated in the large islands. The growth mode of InAs on GaAs is explained by considering the surface energy and strain energy. Variations in the size and shape of the large islands are also interpreted.
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收藏
页码:363 / 367
页数:5
相关论文
共 14 条
[1]   NANOSCALE INP ISLANDS FOR QUANTUM BOX STRUCTURES BY HYDRIDE VAPOR-PHASE EPITAXY [J].
AHOPELTO, J ;
YAMAGUCHI, AA ;
NISHI, K ;
USUI, A ;
SAKAKI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (1A-B) :L32-L35
[2]   GEOMETRY AND INTERFACE STRUCTURE OF ISLAND NUCLEI FOR GASB BUFFER LAYERS GROWN ON (001) GAAS BY METALORGANIC VAPOR-PHASE EPITAXY [J].
AINDOW, M ;
CHENG, TT ;
MASON, NJ ;
SEONG, TY ;
WALKER, PJ .
JOURNAL OF CRYSTAL GROWTH, 1993, 133 (1-2) :168-174
[3]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND OPTICAL MEASUREMENTS ON THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF ONE AND 2 MONOLAYERS OF INAS ON GAAS [J].
DOSANJH, SS ;
DAWSON, P ;
FAHY, MR ;
JOYCE, BA ;
MURRAY, R ;
TOYOSHIMA, H ;
ZHANG, XM ;
STRADLING, RA .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (03) :1242-1247
[4]   DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].
EAGLESHAM, DJ ;
CERULLO, M .
PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946
[5]   INSITU PROBING AT THE GROWTH TEMPERATURE OF THE SURFACE-COMPOSITION OF (INGA)AS AND (INAL)AS [J].
GERARD, JM .
APPLIED PHYSICS LETTERS, 1992, 61 (17) :2096-2098
[6]   1ST STAGES OF THE MBE GROWTH OF INAS ON (001)GAAS [J].
HOUZAY, F ;
GUILLE, C ;
MOISON, JM ;
HENOC, P ;
BARTHE, F .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :67-72
[7]  
LOENALD D, 1993, APPL PHYS LETT, V63, P3203
[8]   SELF-ORGANIZED GROWTH OF REGULAR NANOMETER-SCALE INAS DOTS ON GAAS [J].
MOISON, JM ;
HOUZAY, F ;
BARTHE, F ;
LEPRINCE, L ;
ANDRE, E ;
VATEL, O .
APPLIED PHYSICS LETTERS, 1994, 64 (02) :196-198
[9]   INITIAL GROWTH STAGE AND OPTICAL-PROPERTIES OF A 3-DIMENSIONAL INAS STRUCTURE ON GAAS [J].
NABETANI, Y ;
ISHIKAWA, T ;
NODA, S ;
SASAKI, A .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (01) :347-351
[10]   SCANNING TUNNELING MICROSCOPY OF GAAS-ON-INP HETEROEPITAXIAL GROWTH [J].
OHKOUCHI, S ;
TANAKA, I .
ULTRAMICROSCOPY, 1992, 42 :771-775