SCANNING TUNNELING MICROSCOPY OF GAAS-ON-INP HETEROEPITAXIAL GROWTH

被引：5

作者：

OHKOUCHI, S

TANAKA, I

机构：

[1] Optoelectronics Technology Research Laboratory (OTL), Tsukuba, Ibaraki, 300-26, 5-5, Tohkadai

来源：

ULTRAMICROSCOPY | 1992年 / 42卷

关键词：

D O I：

10.1016/0304-3991(92)90356-O

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The initial stages of GaAs growth on an InP substrate were investigated with an ultra-high-vacuum scanning tunneling microscope (UHV-STM) equipped with a molecular beam epitaxy facility. First, we observed an STM image of an InP surface thermally cleaned under an arsenic flux. The image exhibits 1.6 nm periodic lines of 0.4 nm width along the [110] direction. Next, a few monolayers (ML's) of GaAs-deposited InP surfaces were observed by STM. When less than 2 ML of GaAs was deposited, two-dimensional growth was observed. On the other hand, island formation was observed for more than 2.5 ML of GaAs deposition.

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页码：771 / 775

页数：5

相关论文

共 9 条

[1] RECENT ADVANCES IN EPITAXY [J].

BAUER, E ;

POPPA, H .

THIN SOLID FILMS, 1972, 12 (01) :167-+

[2] ONSET OF INCOHERENCY AND DEFECT INTRODUCTION IN THE INITIAL-STAGES OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(100) [J].

GUHA, S ;

MADHUKAR, A ;

RAJKUMAR, KC .

APPLIED PHYSICS LETTERS, 1990, 57 (20) :2110-2112

[3] DISTRIBUTIONS OF GROWTH-RATES ON PATTERNED SURFACES MEASURED BY SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

HATA, M ;

ISU, T ;

WATANABE, A ;

KATAYAMA, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :692-696

[4]

KASAHARA K, 1990, SOLID STATE ELECTRON, V33, P411

[5] OBSERVATION OF THE INP SURFACE THERMALLY CLEANED IN AN ARSENIC FLUX USING A SCANNING TUNNELING MICROSCOPE [J].

OHKOUCHI, S ;

TANAKA, I .

APPLIED PHYSICS LETTERS, 1991, 59 (13) :1588-1590

[6] LONG-WAVELENGTH PINFET RECEIVER OEIC ON A GAAS-ON-INP HETEROSTRUCTURE [J].

SUZUKI, A ;

ITOH, T ;

TERAKADO, T ;

KASAHARA, K ;

ASANO, K ;

INOMOTO, Y ;

ISHIHARA, H ;

TORIKAI, T ;

FUJITA, S .

ELECTRONICS LETTERS, 1987, 23 (18) :954-955

[7] SCANNING TUNNELING MICROSCOPY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS(001) SURFACES [J].

TANAKA, I ;

OHKOUCHI, S ;

KATO, T ;

OSAKA, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04) :2277-2281

[8] SCANNING TUNNELING MICROSCOPY OF THERMALLY CLEANED INP SURFACES IN AN ARSENIC FLUX [J].

TANAKA, I ;

OHKOUCHI, S ;

OSAKA, F ;

KATO, T .

SURFACE SCIENCE, 1992, 267 (1-3) :191-194

[9] GAAS HETEROEPITAXIAL GROWTH ON AN INP (001) SUBSTRATE [J].

TANAKA, I ;

OHKOUCHI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B) :L1662-L1664