SCANNING TUNNELING MICROSCOPY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS(001) SURFACES

被引：32

作者：

TANAKA, I

OHKOUCHI, S

KATO, T

OSAKA, F

机构：

[1] Optoelectronics Technology Research Laboratory, 5-5 Tohkodai, Tsukuba, Ibaraki

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 04期

关键词：

Arsenic; Desorption; Gallium arsenides; Images; Molecular beam epitaxy; Scanning tunneling microscopy; Surface reconstruction; Surface structure; Ultrahigh vacuum;

D O I：

10.1116/1.585733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A multichamber ultrahigh vacuum (UHV) scanning tunneling microscope (STM) system which includes a molecular-beam epitaxy (MBE) growth chamber, as well as a STM chamber, has been constructed for the investigation of processed GaAs surfaces. We observed MBE-grown GaAs surfaces using this system. Samples were grown on GaAs (001) surfaces and cooled to certain temperatures in an As4 flux before being transferred into an UHV. STM images of c(4 x 4), 2 x 4, and mixed c(4 x 2) and 2 x 2 structures were obtained for the samples cooled to 330, 570, and 470-degrees-C in an As4 flux, respectively. The mixed c(4 x 2) and 2 x 2 structure seems to be formed by desorption of As atoms from the c(4 x 4) surface in an UHV. Also, a new reconstructed structure which has a 2.8-nm periodicity along both the [110] and [110BAR] directions was observed. It seems to be a local structure which has a larger arsenic dimer density than that of the c(4 x 4) structure.

引用

页码：2277 / 2281

页数：5

共 4 条

[1] GAAS EPITAXY AND HETEROEPITAXY - A SCANNING TUNNELING MICROSCOPY STUDY [J].