INITIAL GROWTH STAGE AND OPTICAL-PROPERTIES OF A 3-DIMENSIONAL INAS STRUCTURE ON GAAS

被引：228

作者：

NABETANI, Y

ISHIKAWA, T

NODA, S

SASAKI, A

机构：

[1] Department of Electrical Engineering, Kyoto University

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.358483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A few mololayers of InAs is heteroepitaxially grown on GaAs substrate by molecular-beam epitaxy. Structure and optical properties are investigated. Reflection high-energy electron-diffraction observation reveals that an InAs layer forms a three-dimensional structure with specific facets after two-dimensional growth. The transmission electron microscope observation shows that these structures have structural anisotropy,in the growth plane. Photoluminescense spectroscopy shows that the luminescence from the InAs structures exhibits the polarization property caused by the quantum dot effect of the structural anisotropy.

引用

页码：347 / 351

页数：5

共 22 条

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