RHEED AND X-RAY CHARACTERIZATION OF INGAAS/GAAS GROWN BY MBE

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH AND LUMINESCENCE OF INXGA1-XAS/INXAL1-XAS MULTIQUANTUM WELLS ON GAAS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (04) : 261 - 263

[2] TEMPERATURE-DEPENDENCE OF MOLECULAR-BEAM EPITAXIAL-GROWTH RATES FOR INXGA1-XAS AND INXAL1-XAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (09): : 1441 - 1442

[3] X-RAY STUDY OF MISFIT STRAIN RELAXATION IN LATTICE-MISMATCHED HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1071 - 1073

[4] THIN INAS EPITAXIAL LAYERS GROWN ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 528 - 530

[5] MNOMURA T, 1987, JAPAN J APPL PHYS, V26

[6] STRUCTURE AND STOICHIOMETRY OF (100)-GAAS SURFACES DURING MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (04) : 387 - 397

[7] SELECTIVE EPITAXIAL-GROWTH OF INAS ON GAAS BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1174 - L1176

[8] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 322 - 324

[9] YEN MY, 1978, PPL PHYS LETT, V50, P927

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH AND LUMINESCENCE OF INXGA1-XAS/INXAL1-XAS MULTIQUANTUM WELLS ON GAAS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (04) : 261 - 263

[2] TEMPERATURE-DEPENDENCE OF MOLECULAR-BEAM EPITAXIAL-GROWTH RATES FOR INXGA1-XAS AND INXAL1-XAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (09): : 1441 - 1442

[3] X-RAY STUDY OF MISFIT STRAIN RELAXATION IN LATTICE-MISMATCHED HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1071 - 1073

[4] THIN INAS EPITAXIAL LAYERS GROWN ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 528 - 530

[5] MNOMURA T, 1987, JAPAN J APPL PHYS, V26

[6] STRUCTURE AND STOICHIOMETRY OF (100)-GAAS SURFACES DURING MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (04) : 387 - 397

[7] SELECTIVE EPITAXIAL-GROWTH OF INAS ON GAAS BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1174 - L1176

[8] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 322 - 324

[9] YEN MY, 1978, PPL PHYS LETT, V50, P927