MOLECULAR-BEAM EPITAXY OF INAS AND ITS INTERACTION WITH A GAAS OVERLAYER ON VICINAL GAAS (001) SUBSTRATES

被引：13

作者：

LIN, XW ^{[1
]}

LILIENTALWEBER, Z ^{[1
]}

WASHBURN, J ^{[1
]}

WEBER, ER ^{[1
]}

SASAKI, A ^{[1
]}

WAKAHARA, A ^{[1
]}

NABETANI, Y ^{[1
]}

机构：

[1] KYOTO UNIV,DEPT ELECT ENGN,KYOTO 60601,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 04期

关键词：

D O I：

10.1116/1.587802

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs/InAs/GaAs heterostructures were grown by molecular beam epitaxy on vicinal GaAs (001) substrates. Effects of substrate misorientation on the early stage of InAs epitaxy, as well as the interaction between InAs and a GaAs overlayer, were studied by transmission and scanning electron microscopies and by photoluminescence measurements. The formation of InAs islands were observed after a few monolayer InAs deposition. Two major results were obtained in this study: (a) Upon deposition of a crystalline GaAs overlayer, InAs islands undergo a novel type of morphological transition, i.e., from disk-shaped to ring-shaped ones. (b) Substrate misorientation results in anisotropic effects on InAs island formation. In comparison with on-axis or [110] tilted samples, substrate misorientation toward [110] by up to 5-degrees leads not only to reduction in InAs island density by a factor of 2, but also to the formation of InAs quantum dots. These results were found to be consistent with photoluminescence experiments.

引用

页码：2562 / 2567

页数：6

共 35 条

[1] LIKE-SIGN ASYMMETRIC DISLOCATIONS IN ZINC-BLENDE STRUCTURE [J].