IMPROVEMENT OF THE GROWTH OF INXGA1-XAS ON GAAS (001) USING TE AS SURFACTANT

被引：24

作者：

GRANDJEAN, N ^{[1
]}

MASSIES, J ^{[1
]}

DELAMARRE, C ^{[1
]}

WANG, LP ^{[1
]}

DUBON, A ^{[1
]}

LAVAL, JY ^{[1
]}

机构：

[1] CNRS,ESPCI,PHYS SOLID LAB,F-75231 PARIS 05,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 01期

关键词：

D O I：

10.1063/1.110770

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is demonstrated by using reflection high-energy electron diffraction and transmission electron microscopy that the epitaxial growth of highly strained InxGa1-xAs (x>0.3) layers on GaAs(001) is improved by a preadsorbed Te surfactant layer. The formation of 3D islands is inhibited by the surfactant action and consequently the onset of plastic relaxation (i.e., the critical thickness) is significantly delayed.

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页码：66 / 68

页数：3

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