IMPROVEMENT OF THE GROWTH OF INXGA1-XAS ON GAAS (001) USING TE AS SURFACTANT

被引：24

作者：

GRANDJEAN, N ^{[1
]}

MASSIES, J ^{[1
]}

DELAMARRE, C ^{[1
]}

WANG, LP ^{[1
]}

DUBON, A ^{[1
]}

LAVAL, JY ^{[1
]}

机构：

[1] CNRS,ESPCI,PHYS SOLID LAB,F-75231 PARIS 05,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 01期

关键词：

D O I：

10.1063/1.110770

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is demonstrated by using reflection high-energy electron diffraction and transmission electron microscopy that the epitaxial growth of highly strained InxGa1-xAs (x>0.3) layers on GaAs(001) is improved by a preadsorbed Te surfactant layer. The formation of 3D islands is inhibited by the surfactant action and consequently the onset of plastic relaxation (i.e., the critical thickness) is significantly delayed.

引用

页码：66 / 68

页数：3

共 14 条

[11] PHOTOLUMINESCENCE OF VIRTUAL-SURFACTANT GROWN INAS/AL0.48IN0.52AS SINGLE QUANTUM-WELLS [J].